 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Features * Low collector-emitter saturation voltage VCE(sat) * Satisfactory linearity of forward current transfer ratio hFE * Large collector current IC * I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.60.3 7.20.3 (1.0) (1.0) Unit: mm 7.00.3 3.00.2 2.00.2 3.50.2 0 to 0.15 2.50.2 1.10.1 1.00.2 0.750.1 0.40.1 2.30.2 4.60.4 0.90.1 0 to 0.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating -130 -80 -7 -5 -10 15 1.3 150 -55 to +150 C C Unit V V V A A W 1 2 3 1: Base 2: Collector 3: Emitter I-G1 Package Note) Self-supported type package is also prepared. Electrical Characteristics TC = 25C 3C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = -10 mA, IB = 0 VCB = -100 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = - 0.1 A VCE = -2 V, IC = -2 A IC = -4 A, IB = - 0.2 A IC = -4 A, IB = - 0.2 A VCE = -10 V, IC = - 0.5 A, f = 10 MHz IC = -2 A, IB1 = - 0.2 A, IB2 = 0.2 A VCC = -50 V 30 0.13 0.5 0.13 45 90 260 - 0.5 -1.5 V V MHz s s s Min -80 -10 -50 Typ Max Unit V A A Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q 90 to 180 P 130 to 260 2.50.2 Publication date: March 2003 SJD00052AED 1 2SB1176 PC Ta 20 -8 (1)TC=Ta (2)Without heat sink (PC=1.3W) IC VCE Collector-emitter saturation voltage VCE(sat) (V) -100 -7 IB=-120mA TC=25C VCE(sat) IC IC/IB=20 Collector power dissipation PC (W) -100mA Collector current IC (A) 15 -6 -5 -4 -3 -80mA -60mA -40mA -30mA -20mA -10 10 (1) -1 25C TC=100C -25C 5 -2 -10mA - 0.1 (2) 0 0 40 80 120 160 -1 -3mA 0 0 -2 -4 -6 -8 -10 - 0.01 - 0.01 - 0.1 -1 -10 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat) IC -100 IC/IB=20 hFE IC 104 VCE=-2V fT I C 104 VCE=-10V f=10MHz TC=25C Base-emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE -10 103 TC=100C 25C Transition frequency fT (MHz) -10 103 25C -1 TC=-25C 100C 102 -25C 102 - 0.1 10 10 - 0.01 - 0.01 - 0.1 -1 -10 1 - 0.01 - 0.1 -1 1 - 0.01 - 0.1 -1 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob VCB Turn-on time ton , Storage time tstg , Fall time tf (s) Collector output capacitance C (pF) (Common base, input open circuited) ob 104 IE=0 f=1MHz TC=25C ton , tstg , tf IC 100 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (-IB1=IB2) VCC=-50V TC=25C Safe operation area -100 Non repetitive pulse TC=25C Collector current IC (A) 103 10 -10 ICP IC t=1ms t=10ms t=300ms 102 1 tstg ton -1 10 0.1 tf - 0.1 1 - 0.1 -1 -10 -100 0.01 0 - 0.8 -1.6 -2.4 -3.2 - 0.01 -1 -10 -100 -1 000 Collector-base voltage VCB (V) Collector current IC (A) Collector-emitter voltage VCE (V) 2 SJD00052AED 2SB1176 Rth t 103 (1)Without heat sink (2)With a 50x50x2mm Al heat sink Thermal resistance Rth (C/W) 102 (1) (2) 10 1 10-1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) SJD00052AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
Price & Availability of 2SB1176
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |